AOK9N90

AOK9N90 900V,9A N-Channel MOSFET General Description Product Summary The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1000@150℃ 9A RDS(ON) (at VGS=10V) < 1.3Ω 100% UIS Tested 100% Rg Tested Top View D TO-247 G S G S D AOK9N90 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK9N90 900 Units V ±30 V 9 6 A Pulsed Drain Current C IDM Avalanche Current C IAR 3.6 A Repetitive avalanche energy C EAR 194 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 388 5 368 mJ V/ns W 2.9 -55 to 150 W/ oC °C 300 °C AOK9N90 40 0.5 0.34 Units °C/W °C/W °C/W Rev.1.0 June 2013 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 34 Page 1 of 5 AOK9N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 1000 V 0.9 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM 4 4.5 nΑ V VGS=10V, ID=4.5A 1 1.3 Ω VDS=40V, ID=4.5A 13 1 V Maximum Body-Diode Continuous Current 9 A Maximum Body-Diode Pulsed Current 34 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 3.4 S 1700 2130 2560 pF VGS=0V, VDS=25V, f=1MHz 100 152 200 pF 8 14 20 pF VGS=0V, VDS=0V, f=1MHz 0.6 1.3 2.0 Ω 46 58 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs ±100 µA 35 VGS=10V, VDS=720V, ID=9A 9.5 nC Qgd Gate Drain Charge 20.5 nC tD(on) Turn-On DelayTime 45 ns tr Turn-On Rise Time 80 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=9A,dI/dt=100A/µs,VDS=100V 450 568 690 Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V 6.0 7.8 10.0 Body Diode Reverse Recovery Time VGS=10V, VDS=450V, ID=9A, RG=25Ω 116 ns 60 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using