AOKS40B60D1

AOKS40B60D1 600V, 40A Alpha IGBT TM General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 600V 40A VCE(sat) (TC=25°C) 1.85V Applications • Power factor correction • UPS & Solar Inverters • Very High Switching Frequency Applications • Welding Machines Top View C TO-247 G G C E E AOKS40B60D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage VGE Spike V GE 500ns VSPIKE Continuous Collector TC=25°C TC=100°C Current IC AOKS40B60D1 600 Units V ±20 V 24 V 80 40 A Pulsed Collector Current, Limited by TJmax I CM 140 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 140 A Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C t SC 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Rev.1.0: May 2015 PD T J , T STG TL Symbol R θ JA R θ JC www.aosmd.com 278 111 W -55 to 150 °C 300 °C AOKS40B60D1 40 0.45 Units °C/W °C/W Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage Min IC=1mA, VGE=0V, TJ=25°C V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=40A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA Typ Max Units V 600 - - TJ=25°C - 1.85 2.4 TJ=125°C - 2.2 - TJ=150°C - 2.3 - - 5.5 - TJ=25°C - - 10 TJ=125°C - - 600 V V µA I CES Zero Gate Voltage Collector Current VCE=600V, VGE=0V - - 3000 I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=40A - 16 - S - 1950 - pF - 200 - pF TJ=150°C DYNAMIC PARAMETERS C ies Input Capacitance C oes Output Capacitance VGE=0V, VCE=25V, f=1MHz C res Reverse Transfer Capacitance - 9 - pF Qg Total Gate Charge - 45 - nC Q ge Gate to Emitter Charge - 17 - nC Q gc Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between short circuits ≥ 1.0s Gate resistance - 15.6 - nC VGE=15V, VCE=400V, RG=25Ω - 140 - A f=1MHz - 1.45 - Ω - 29 - ns - 22 - ns - 74 - ns - 15 - ns - 1.55 - mJ - 0.3 - mJ - 1.85 - mJ - 29 - ns - 24 - ns - 85 - ns - 17 - ns - 1.7 - mJ - 0.49 - mJ - 2.19 - mJ I C(SC) Rg VGE=15V, VCE=480V, IC=40A SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) t D(on) Turn-On DelayTime tr Turn-On Rise Time t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy E total Total Switching Energy TJ=25°C VGE=15V, VCE=400V, IC=40A, RG=7.5Ω, Parasitic Ιnductance=150nH Eon and Etotal include diode (AOK40B60D1) reverse recovery SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) t D(on) Turn-On DelayTime tr Turn-On Rise Time t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy E total Total Switching Energy TJ=150°C VGE=15V, VCE=400V, IC=40A, RG=7.5Ω, Parasitic Inductance=150nH Eon and Etotal include diode (AOK40B60D1) reverse recovery THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 7 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 240 200 20V 20V 200 17V 160 15V 120 17V IC (A) IC (A) 160 120 13V 15V 13V 80 80 11V 11V 40 40 8V VGE= 7V 0 0 0 1 2 3 4 5 6 7 0 1 VCE (V) Figure 1: Output Characteristic (Tj=25°C) 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=150°C) 5 100 VCE=20V IC=80A -40°C 4 80 25°C 150°C 60 VCE(sat) (V) IC (A) 9V 8V VGE=7V 9V 40 20 3 IC=40A 2 IC=20A 1 0 0 4 7 10 13 16 0 VGE (V) Figure 3: Transfer Characteristic 25 50 75 100 125 150 175 Temperature (°C) Figure 4: Collector-Emitter Saturation Voltage vs. Junction Temperature 8 VGE(TH) (V) 7 6 5 4 3 2 0 30 60 90 120 150 TJ (°C) Figure 5: VGE(TH) vs. Tj Rev.1.0: May 2015 www.aosmd.com Page 3 of 7 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=40A 12 Cies 1000 Capacitance (pF) VGE (V) Coes 9 6 3 100 10 0 Cres 1 0 10 20 30 40 50 0 5 Qg (nC) Figure 6: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE (V) Figure 7: Capacitance Characteristic 300 250 Power Disspation (W) 200 150 100 50 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Power Disspation as a Function of Case 80 Current rating IC (A) 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating Rev.1.0: May 2015 www.aosmd.com Page 4 of 7 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Td(off) Tf Td(on) Tr Switching Time (ns) 1000 100 10 10000 Td(off) Tf Td(on) 1000 Switching Time (ns) 10000 Tr 100 10 1 1 0 20 40 60 80 IC (A) Figure 11: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=7.5Ω) 100 0 20 40 60 80 Rg (Ω) Figure 12: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=40A) 100 1000 Switching Time (ns) Td(off) Tf Td(on) Tr 100 10 1 0 100 150 TJ (°C) Figure 13: Switching Time vs.Tj ( VGE=15V, VCE=400V, IC=40A, Rg=7.5Ω) Rev.1.0: May 2015 50 200 www.aosmd.com Page 5 of 7 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5 Eoff Eoff Eon Eon 4 Switching Energy (mJ) SwitchIng Energy (mJ) 8 Etotal 6 4 Etotal 3 2 2 1 0 0 0 20 40 60 80 100 0 IC (A) Figure 14: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=7.5Ω) 3 20 60 80 Rg (Ω) Figure 15: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=40A) 100 3 Eoff Eoff 2.5 2.5 Eon Etotal 2 Switching Energy (mJ) Switching Energy (mJ) 40 1.5 1 0.5 Eon Etotal 2 1.5 1 0.5 0 0 25 50 75 100 125 150 TJ (°C) Figure 16: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=40A, Rg=7.5Ω) 175 0 200 250 300 350 400 450 VCE (V) Figure 17: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=40A, Rg=7.5Ω) 500 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 Rev.1.0: May 2015 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for IGBT www.aosmd.com 1 10 Page 6 of 7 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: May 2015 www.aosmd.com Page 7 of 7