AOL1206

AOL1206 30V N-Channel MOSFET General Description Product Summary The AOL1206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS RDS(ON) (at VGS=10V) 30V 54A < 6m: RDS(ON) (at VGS = 4.5V) < 8.5m: ID (at VGS=10V) 100% UIS Tested 100% Rg Tested UltraSO-8 Top View TM D Bottom View D G S G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev0 : Feb 2010 IAS, IAR 30 A EAS, EAR 45 mJ 62 Steady-State Steady-State W 31 2.7 RTJA RTJC www.aosmd.com W 1.7 TJ, TSTG Symbol t ” 10s A 13 PDSM TA=70°C A 16 PD TC=100°C V 250 IDSM TA=70°C ±20 42 IDM TA=25°C Continuous Drain Current Units V 54 ID TC=100°C Maximum 30 -55 to 175 Typ 16 38 2 °C Max 20 46 2.4 Units °C/W °C/W °C/W Page 1 of 6 AOL1206 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250PA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250PA 1.3 VGS=10V, VDS=5V 250 RDS(ON) Static Drain-Source On-Resistance 100 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V G Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=20A Units V 1 TJ=55°C gFS Max 30 VGS(th) ID(ON) IS Typ 1.8 2.3 PA nA V A 5 6 7.4 9 6.8 8.5 70 0.7 m: m: S 1 V 54 A 1110 1390 1670 pF 350 510 670 pF 32 53 90 pF 0.4 0.9 1.5 : 15.5 19.6 23.5 nC 7 8.7 10.5 nC 2.8 3.6 4.5 nC 1.8 3 4.2 nC 6 VGS=10V, VDS=15V, RL=0.75:, RGEN=3: ns 2 ns 20 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/Ps 12 15 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/Ps 30 37 45 3.5 ns ns nC 2 A. The value of RTJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R TJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RTJA is the sum of the thermal impedence from junction to case RTJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using