AOL1240

AOL1240 40V N-Channel MOSFET General Description Product Summary The AOL1240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 40V 69A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3mΩ RDS(ON) (at VGS =4.5V) < 4.4mΩ 100% UIS Tested 100% Rg Tested Top View D UltraSO-8TM Bottom View D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 400 19 IDSM TA=70°C ±20 54 IDM TA=25°C Units V 69 ID TC=100°C Maximum 40 A 15 Avalanche Current C IAS, IAR 65 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 211 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 0: Sep. 2011 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 62.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 125 PD -55 to 175 Typ 20 50 1 °C Max 25 60 1.2 Units °C/W °C/W °C/W Page 1 of 6 AOL1240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 40 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 400 Units V VDS=40V, VGS=0V VGS(th) 100 nA 1.8 2.3 V 2.4 3 3.75 4.7 VGS=4.5V, ID=20A 3.2 4.4 mΩ 90 1 V 69 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance A 0.68 mΩ S 2530 3165 3800 pF 640 920 1120 pF 13.5 45.5 77.5 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33.5 42 50.5 nC Qg(4.5V) Total Gate Charge 12.5 18 23.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 8 nC 3.5 nC 9 ns 3.5 ns 32 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 20.5 27 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 40 56 73 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using