AOL1436

AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1436 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power conversion. Standard Product AOL1436 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.5mΩ (VGS = 10V) UIS Tested! Rg,Ciss,Coss,Crss Tested! Ultra SO-8TM Top View D Fits SOIC8 footprint ! D S Bottom tab connected to drain G G S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TC=25°C G B Current TC=100°C ID C Pulsed Drain Current IDM Continuous Drain TA=25°C A Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.3mHC Power Dissipation Power Dissipation B Maximum 25 ±30 50 48 120 20 16 28 118 43 22 5 3 -55 to 175 Units V V A IDSM IAR EAR PD A A mJ W W °C Max 25 55 3.5 Units °C/W °C/W °C/W TC=25°C TC=100°C TA=25°C PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-CaseD A Symbol RθJA RθJC Typ 20 46 2.5 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1436 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250 µA, VGS=0V VDS=20V, V GS=0V TJ=55°C VDS=0V, VGS= ±30V VDS=VGS ID=250 µA VGS=12V, V DS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=12V, ID=20A VGS=10V, ID=20A TJ=125°C gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current 2 120 5 6.6 8.6 11 43 0.72 1 50 1100 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 200 0.8 20 VGS=10V, V DS=12.5V, ID=20A 17 6.5 6.8 9.5 VGS=10V, V DS=12.5V, R L=0.68 Ω, RGEN=0.6Ω IF=20A, dI/dt=100A/ µs IF=20A, dI/dt=100A/ µs 13.5 11.5 5.4 32 19 nC nC ns ns ns ns ns nC 1.5 24 1350 6 8.2 11.5 3.2 Min 25 1 5 100 4 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on t