AOL1454

AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 40V ID = 50A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D G Bottom tab connected to drain S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C H Units V ±20 V 50 TC=100°C Pulsed Drain Current C Continuous Drain Current A Maximum 40 ID 48 IDM 100 TA=25°C A 12 IDSM TA=70°C A 10 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Maximum Junction-to-Case D 2.1 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 60 PD RθJA RθJC Typ 20 50 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W www.aosmd.com AOL1454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min Conditions ID=250uA, VGS=0V Typ 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 VGS=10V, ID=20A 2 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 47 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 9.0 10 10.3 1600 VGS=0V, VDS=20V, f=1MHz 3 uA uA V A 7.5 TJ=125°C Units V VDS=40V, VGS=0V VGS(th) Coss Max 13 mΩ mΩ S 1 V 50 A 1920 pF 320 pF 100 pF 3.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 nC Qg(4.5V) Total Gate Charge 10.5 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 4.2 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 6.5 ns 12.5 ns 33 ns 16 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using