AOL1712

AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* TM Features VDS (V) = 30V (VGS = 10V) ID =65A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8 Top View D Bottom tab connected to drain G D S G SRFET Soft Recovery MOSFET: Integrated Schottky Diode S TM Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain B, H Current Pulsed Drain Current Continuous Drain A Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation Power Dissipation B C Maximum 30 ±12 65 Units V V A VGS TC=25°C TC=100°C C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG 65 80 16 12 38 217 100 50 2.1 1.3 -55 to 175 TA=25°C TA=70°C A A mJ W W °C TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Case D Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 19.6 50 1 Max 25 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1712 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 1.4 80 3.5 5.5 4.4 90 0.36 0.5 65 3940 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 255 0.72 73 VGS=10V, VDS=15V, ID=20A 35 10.4 12.4 9.8 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=300A/µs 8.4 45 10 36 32 43 1.1 95 5120 4.2 6.6 5.5 S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC mΩ 1.8 Min 30 0.1 20 ±100 2.5 Typ Max Units V mA nA V A Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs A: The value of R θJA is measured with the device in a still air environment with T A=25°C. The power dissipation P DSM and current rating IDSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using