AON1605_001

AON1605 20V P-Channel MOSFET General Description Product Summary The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. ID (at VGS=-4.5V) -20V -0.7A RDS(ON) (at VGS =-4.5V) < 710mW RDS(ON) (at VGS =-2.5V) < 930mW RDS(ON) (at VGS =-1.8V) < 1250mW Typical ESD protection HBM Class 1C VDS DFN 1.0x0.6 Top View D Bottom View G S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E VGS TA=25°C Pulsed Drain Current C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Ambient Maximum Junction-to-Ambient B Rev.2.0: March 2019 Steady-State t ≤ 10s Steady-State A A -2 W 0.55 TJ, TSTG Symbol t ≤ 10s V 0.9 PD TA=70°C ±8 -0.55 IDM TA=25°C Units V -0.7 ID TA=70°C Maximum -20 RqJA RqJA www.aosmd.com -55 to 150 Typ 80 110 200 280 °C Max 100 140 245 340 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON1605 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage On state drain current VDS=VGS, ID=-250mA -0.4 VGS=-4.5V, VDS=-5V -2 TJ=55°C VGS=-4.5V, ID=-0.4A TJ=125°C RDS(ON) Static Drain-Source On-Resistance V 590 710 835 1010 A mW 930 mW mW VGS=-1.5V, ID=-0.1A 1115 mW 1 S Diode Forward Voltage IS=-0.4A,VGS=0V Maximum Body-Diode Continuous Current E DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance mA -1.1 1250 IS Rg ±10 -0.7 955 VSD Reverse Transfer Capacitance mA 745 VDS=-5V, ID=-0.4A Output Capacitance -5 VGS=-1.8V, ID=-0.2A Forward Transconductance Crss Units VGS=-2.5V, ID=-0.3A gFS Coss Max V VDS=-20V, VGS=0V IDSS ID(ON) Typ VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-0.4A -0.85 -1.2 V -0.7 A 50 pF 12 pF 7.5 pF 45 W 0.75 nC 0.15 nC Qgs Gate Source Charge Qgd Gate Drain Charge 0.2 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=25W, RGEN=3W 5 ns 22 ns 8 ns A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R qJA is measured with the device mounted on FR-4 minimum pad board, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The static characteristics in Figures 1 to 6 are obtained using