AON2240

AON2240 40V N-Channel MOSFET General Description Product Summary The AON2240 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 40V 8A RDS(ON) (at VGS =10V) < 21mΩ RDS(ON) (at VGS =4.5V) < 29mΩ VDS DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G Pin 1 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Dec 2011 Steady-State A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V 32 PD TA=70°C ±20 6 IDM TA=25°C A Units V 8 ID TA=100°C Maximum 40 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 32 TJ=55°C TJ=125°C VGS=4.5V, ID=4A ±100 nA 1.9 2.4 V 16.8 21 24.5 31 22.6 29 mΩ 1 V 3.5 A A gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=8A VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 1 mΩ S 415 pF 112 pF 11 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) µA 5 VGS=10V, ID=8A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ pF Ω 2.2 3.5 6.5 12 nC 3 6 nC 1.2 nC 1.1 nC 4 ns 3 ns 15 ns tf Turn-Off Fall Time 2 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 12.5 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using