AON2260

AON2260 60V N-Channel MOSFET General Description Product Summary The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 6A RDS(ON) (at VGS = 10V) < 44mΩ RDS(ON) (at VGS = 4.5V) < 53mΩ DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G D G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Dec 2011 Steady-State A A 30 W 1.8 TJ, TSTG Symbol t ≤ 10s V 2.8 PD TA=70°C ±20 4.7 IDM TA=25°C Units V 6 ID TA=70°C Maximum 60 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2260 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 nA 2 2.5 V 36 44 61.5 75 VGS=4.5V, ID=4A 42 53 mΩ 1 V 3.5 A VGS=10V, ID=6A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=6A 21 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 60 VDS=60V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz S 426 pF 50 pF 5 VGS=0V, VDS=0V, f=1MHz pF Ω 2.3 3.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.1 12 nC Qg(4.5V) Total Gate Charge 2.6 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=6A VGS=10V, VDS=30V, RL=5Ω, RGEN=3Ω 1 mΩ 1.2 nC 0.8 nC 3 ns 2.5 ns 15 ns tf Turn-Off Fall Time 1.5 ns trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 12 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using