AON2290

AON2290 100V N-Channel MOSFET General Description Product Summary The AON2290 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 100V 4.5A RDS(ON) (at VGS =10V) < 72mW RDS(ON) (at VGS =4.5V) < 97mW VDS D DFN 2x2B Top View S Bottom View D D D Pin 1 S G D G Pin 1 D S Orderable Part Number Package Type Form Minimum Order Quantity AON2290 DFN 2x2B Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C TA=25°C Power Dissipation A Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.3.0: Feburary 2020 Steady-State Steady-State A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V 25 PD Junction and Storage Temperature Range ±20 3.5 IDM TA=70°C Units V 4.5 ID TA=70°C Maximum 100 RqJA RqJC www.aosmd.com -55 to 150 Typ 37 66 6.5 °C Max 45 80 8.0 Units °C/W °C/W °C/W Page 1 of 6 AON2290 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage On state drain current VDS=VGS, ID=250mA 1.7 VGS=10V, VDS=5V 25 TJ=55°C VGS=10V, ID=4.5A 5 nA 2.8 V 59 72 110 134 97 A VGS=4.5V, ID=4A 77 gFS Forward Transconductance VDS=5V, ID=4.5A 13 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA ±100 Static Drain-Source On-Resistance TJ=125°C Units 2.3 RDS(ON) Coss Max V VDS=100V, VGS=0V IDSS ID(ON) Typ 0.78 mW mW S 1 V 3.5 A 415 pF 32 pF 3 pF 1.4 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.5 12 nC Qg(4.5V) Total Gate Charge 3 6 nC VGS=10V, VDS=50V, ID=4.5A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 1.5 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time 2 ns tD(off) Turn-Off DelayTime 15 ns tf trr Turn-Off Fall Time 2 ns IF=4.5A, dI/dt=500A/ms 16 Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/ms 44 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=11W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 RqJA=80°C/W 0.1 PD 0.01 Single Pulse 0.001 1E-05 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: Feburary 2020 www.aosmd.com Page 4 of 6 AON2290 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=8.0°C/W 1 0.1 PD Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance (Note G Rev.3.0: Feburary 2020 www.aosmd.com Page 5 of 6 AON2290 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgd Qgs VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.3.0: Feburary 2020 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6