AON2401

AON2401 8V P-Channel MOSFET General Description Product Summary The AON2401 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-2.5V) -8V -8A VDS RDS(ON) (at VGS =-2.5V) < 22mΩ RDS(ON) (at VGS =-1.8V) < 28mΩ RDS(ON) (at VGS =-1.5V) < 36mΩ RDS(ON) (at VGS =-1.2V) < 53mΩ DFN 2x2B Top View S D Bottom View D D D Pin 1 S D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : April. 2012 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±5 -6 IDM TA=25°C Units V -8 ID TA=70°C C Maximum -8 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±5V Gate Threshold Voltage VDS=VGS, ID=-250µA -0.15 ID(ON) On state drain current VGS=-2.5V, VDS=-5V -32 ±100 nA -0.65 V 18 22 24.5 32 VGS=-1.8V, ID=-6A 22.6 28 VGS=-1.5V, ID=-4A 27.7 36 mΩ VGS=-1.2V, ID=-2A 39 53 mΩ 33 TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-4V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA -0.4 VGS=-2.5V, ID=-8A Coss Units V -1 VGS(th) Static Drain-Source On-Resistance Max -8 VDS=-8V, VGS=0V IGSS RDS(ON) Typ A -0.55 mΩ S -1 V -4 A 1465 pF 345 pF 235 pF 10 Ω 12.5 VGS=-4.5V, VDS=-4V, ID=-8A mΩ 18 nC 1.5 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 4 ns tr Turn-On Rise Time 28 ns tD(off) Turn-Off DelayTime 99 ns tf Turn-Off Fall Time 43 ns ns nC VGS=-4.5V, VDS=-4V, RL=0.5Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 23 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 7 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using