AON2403

AON2403 12V P-Channel MOSFET General Description Product Summary The AON2403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-4.5V) -12V -8A VDS RDS(ON) (at VGS =-4.5V) < 21mΩ RDS(ON) (at VGS =-2.5V) < 28mΩ RDS(ON) (at VGS =-1.8V) < 40mΩ RDS(ON) (at VGS =-1.5V) < 54mΩ DFN 2x2B Top View S D Bottom View D D D Pin 1 S D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : July 2012 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±8 -6 IDM TA=25°C Units V -8 ID TA=70°C C Maximum -12 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -12 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -32 VGS=-4.5V, ID=-8A TJ=125°C Static Drain-Source On-Resistance nA -0.9 V 16.5 21 19.3 25 A 21.5 28 mΩ VGS=-1.8V, ID=-4A 30 40 mΩ 54 mΩ VGS=-1.5V, ID=-1A 36 33 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge mΩ VGS=-2.5V, ID=-6A VDS=-5V, ID=-8A Crss µA ±100 Forward Transconductance Output Capacitance Units -0.6 gFS Coss Max V VDS=-12V, VGS=0V IGSS RDS(ON) Typ -0.6 -1 V -3.5 A 1370 pF 350 pF 258 pF 10 Ω 12.7 VGS=-4.5V, VDS=-6V, ID=-8A S 18 nC 1.7 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 25 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-4.5V, VDS=-6V, RL=0.75Ω, RGEN=3Ω 70 ns 41.5 ns IF=-8A, dI/dt=100A/µs 20.7 Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 5.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using