AON2405

AON2405 20V P-Channel MOSFET General Description Product Summary The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-4.5V) -20V -8A VDS RDS(ON) (at VGS =-4.5V) < 32mΩ RDS(ON) (at VGS =-2.5V) < 41mΩ RDS(ON) (at VGS =-1.8V) < 56mΩ RDS(ON) (at VGS =-1.5V) < 70mΩ DFN 2x2B Top View D Bottom View D 6 D 5 S D(8) 4 S(7) 1 3 D G D G Pin 1 Pin 1 2 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev.3.0: January 2015 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±8 -6 IDM TA=25°C Units V -8 ID TA=70°C C Maximum -20 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 Typ Max V VDS=-20V, VGS=0V -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -32 Units µA ±100 nA -0.65 -0.9 V 26 32 35 43 VGS=-2.5V, ID=-5A 32 41 mΩ VGS=-1.8V, ID=-2A 41 56 mΩ VGS=-1.5V, ID=-2A 46 70 mΩ Forward Transconductance VDS=-5V, ID=-8A 23 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current VGS=-4.5V, ID=-8A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A -0.62 S -1 V -4.5 A 1025 pF 167 pF 119 pF 11 Ω 13 VGS=-4.5V, VDS=-10V, ID=-8A mΩ 18 nC 2 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 28 ns tD(off) Turn-Off DelayTime 95 ns tf Turn-Off Fall Time 46 ns ns nC VGS=-4.5V, VDS=-10V, RL=1.25Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 4 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using