AON2408

AON2408 20V N-Channel MOSFET General Description Product Summary The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) 20V 8A RDS(ON) (at VGS =4.5V) < 14.5mΩ RDS(ON) (at VGS =2.5V) < 19mΩ VDS DFN 2x2B Top View S D Bottom View D D D Pin 1 S D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Dec 2011 Steady-State A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V 32 PD TA=70°C ±12 6 IDM TA=25°C A Units V 8 ID TA=100°C C Maximum 20 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 6 AON2408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±12V VDS=VGS, ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 32 ±100 nA 0.83 1.2 V 11.6 14.5 16.3 20.5 VGS=2.5V, ID=4A 15 19 mΩ 1 V 3.5 A VGS=4.5V, ID=8A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) mΩ S 782 pF VGS=0V, VDS=10V, f=1MHz 158 pF 98 pF VGS=0V, VDS=0V, f=1MHz 2.4 Ω 7 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ VGS=4.5V, VDS=10V, ID=8A 1 nC Gate Drain Charge 2.4 nC Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.5 ns 28 ns tf Turn-Off Fall Time 6 ns trr Body Diode Reverse Recovery Time Qrr IF=8A, dI/dt=100A/µs 11 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 2.7 ns nC VGS=4.5V, VDS=10V, RL=1.25Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using