AON2409

AON2409 30V P-Channel MOSFET General Description Product Summary • The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) VDS -30V -8A RDS(ON) (at VGS =-10V) < 32mΩ RDS(ON) (at VGS =-4.5V) < 53mΩ • RoHS and Halogen-Free Compliant DFN 2x2B Top View S Bottom View D D D D S Pin 1 D G Pin 1 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 2.0 : October 2014 Steady-State A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±20 -6.3 IDM TA=25°C Power Dissipation A Units V -8 ID TA=70°C Maximum -30 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 44 79 Units °C/W °C/W Page 1 of 5 AON2409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.1 ID(ON) On state drain current VGS=-10V, VDS=-5V -32 TJ=55°C nA V 26.5 32 33.6 41 VGS=-4.5V, ID=-6A 42 53 mΩ 20 -1 V 3.5 A TJ=125°C Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Gate resistance µA -2.3 gFS Rg -5 ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.75 VGS=-10V, ID=-8A Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz A -0.7 S 530 pF 114 pF 75 VGS=0V, VDS=0V, f=1MHz mΩ pF Ω 11 22 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 14.5 nC Qg(4.5V) Total Gate Charge 6 7.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-15V, ID=-8A 1.8 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs 25.4 VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 7.7 ns 5.5 ns 26.3 ns 11.5 ns 12.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using