AON2410

AON2410 30V N-Channel MOSFET General Description Product Summary The AON2410 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) 30V 8A RDS(ON) (at VGS = 4.5V) < 21mΩ RDS(ON) (at VGS = 2.5V) < 28mΩ VDS DFN 2x2B Top View S D Bottom View D D D S Pin 1 D Pin 1 G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Dec 2011 Steady-State A A 32 W 1.8 TJ, TSTG Symbol t ≤ 10s V 2.8 PD TA=70°C ±12 6 IDM TA=25°C Units V 8 ID TA=70°C Maximum 30 RθJA www.aosmd.com -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2410 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 32 TJ=55°C VGS=4.5V, ID=8A TJ=125°C VGS=2.5V, ID=4A ±100 nA 1.07 1.5 V 17.1 21 26 32 21.2 28 A Forward Transconductance VDS=5V, ID=8A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 3.5 A 813 pF VGS=0V, VDS=15V, f=1MHz 98 pF VGS=0V, VDS=0V, f=1MHz 2.3 3.5 8 12 VGS=4.5V, VDS=15V, ID=8A 1.2 nC 56 SWITCHING PARAMETERS Qg Total Gate Charge pF Ω nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3 ns 26 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time Qrr IF=8A, dI/dt=100A/µs 10 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 2.4 ns nC VGS=4.5V, VDS=15V, RL=1.8Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using