AON2411

AON2411 12V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 1.8V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant ID (at VGS=-4.5V) -12V -20A RDS(ON) (at VGS=-4.5V) < 8mΩ RDS(ON) (at VGS=-3.0V) < 10.2mΩ RDS(ON) (at VGS=-2.5V) < 11.6mΩ RDS(ON) (at VGS=-1.8V) < 17.5mΩ Typical ESD protection HBM Class 2 Application • Battery path load switch • System load switch DFN 2x2C Top View Bottom View D D G S G Pin 1 S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON2411 DFN 2x2C Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev.1.0: December 2013 Steady-State A 5.0 W 3.2 TJ, TSTG Symbol t ≤ 10s V -80 PD TA=70°C ±8 -15.5 IDM TA=25°C Power Dissipation B Units V -20 ID TA=70°C Maximum -12 RθJA -55 to 150 Typ 20 45 www.aosmd.com °C Max 25 55 Units °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -12 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS, ID=-250µA TJ=55°C ±10 µA -0.6 -0.9 V 6.6 8.0 8.6 10.4 VGS=-3.0V, ID=-11A 8.1 10.2 mΩ VGS=-2.5V, ID=-10A 9.2 11.6 mΩ 17.5 mΩ -1 V -7 A VGS=-1.8V, ID=-8A 13.7 gFS Forward Transconductance VDS=-5V, ID=-12A 60 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-6V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA -5 -0.3 TJ=125°C Coss Units -1 VGS=-4.5V, ID=-12A Static Drain-Source On-Resistance Max V VDS=-12V, VGS=0V IDSS RDS(ON) Typ -0.59 VGS=-4.5V, VDS=-6V, RL=0.5Ω, RGEN=3Ω S 2180 pF 675 pF 425 pF 13.5 Ω 20 VGS=-4.5V, VDS=-6V, ID=-12A mΩ 30 nC 4 nC 5.5 nC 15 ns 45 ns 135 ns 185 ns IF=-12A, dI/dt=100A/µs 28 Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 13 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 1.8V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: December 2013 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: December 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5