AON2420

AON2420 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 8A RDS(ON) (at VGS =10V) < 11.7mΩ RDS(ON) (at VGS =4.5V) < 17.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 2x2B Top View S D Bottom View D D D S Pin 1 D G Pin 1 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev0 : April 2012 36 Steady-State V W 1.8 TJ, TSTG Symbol t ≤ 10s A 2.8 PD Junction and Storage Temperature Range V 32 VSPIKE TA=70°C ±20 6 IDM 100ns TA=25°C Units V 8 ID TA=100°C Maximum 30 RθJA -55 to 150 Typ 37 66 www.aosmd.com °C Max 45 80 Units °C/W °C/W Page 1 of 5 AON2420 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VDS=5V, ID=8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=8A µA 5 1.2 1.7 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ 1.8 ±100 nA 2.2 V 9.6 11.7 13 15.8 13.6 17.5 mΩ 1 V 3.5 A 41 0.7 mΩ S 552 pF 227 pF 28 pF 3.4 4.8 Ω 8.9 12 nC 4.3 5.8 nC 1.5 nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.3 ns 18.5 ns tf Turn-Off Fall Time 4.0 ns trr Body Diode Reverse Recovery Time Qrr IF=8A, dI/dt=100A/µs 13.2 Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3.2 ns nC VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using