AON2801

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. RoHS and Halogen-Free Compliant VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 G2 G1 D1 Top G2 VGS TA=25°C S2 TA=70°C TA=25°C Units V ±8 V ID -2.3 IDM -15 Junction and Storage Temperature Range W 0.95 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State A 1.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Maximum -20 -3 Pulsed Drain Current C Rev.3.0: October 2015 S1 Symbol VDS Gate-Source Voltage Power Dissipation A S2 Bottom Parameter Drain-Source Voltage Continuous Drain CurrentA D2 D1 RθJA RθJA www.aosmd.com Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON2801 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 TJ=55°C nA V 100 120 135 170 VGS=-2.5V, ID=-2.6A 128 160 mΩ VGS=-1.8V, ID=-1.5A 160 200 mΩ TJ=125°C VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge A mΩ 6 S -0.76 V 540 -1 A 700 pF VGS=0V, VDS=-10V, f=1MHz 90 pF 63 pF VGS=0V, VDS=0V, f=1MHz 9.5 Ω VGS=-4.5V, VDS=-10V, ID=-3A 1.2 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs µA -1 Forward Transconductance Output Capacitance -5 ±100 gFS Coss Units -0.55 VGS=-4.5V, ID=-3A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 5 6.5 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time 40 ns tD(off) Turn-Off DelayTime 28.5 ns tf trr Turn-Off Fall Time Qrr VGS=-4.5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω 46 IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 21 ns 28 9.1 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The -15 value in any given application depends Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using