AON2802

AON2802 30V Dual N-Channel MOSFET General Description Product Summary The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 2A RDS(ON) (at VGS=10V) < 60mΩ RDS(ON) (at VGS=4.5V) < 68mΩ RDS(ON) (at VGS=2.5V) < 88mΩ Typical ESD protection HBM Class 3A DFN 2x2A Top View D2 Pin 1 G1 S1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS TA=25°C Continuous Drain Current G Pulsed Drain Current C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0: Sep. 2012 Steady-State ±12 V A 8 W 1.3 TJ, TSTG Symbol t ≤ 10s Units V 2.1 PD Junction and Storage Temperature Range Maximum 30 1.6 IDM TA=70°C S2 2 ID TA=70°C TA=25°C Power Dissipation B G2 G1 Pin 1 Gate-Source Voltage D2 D1 Bottom View D1 G2 S2 D1 D2 RθJA www.aosmd.com -55 to 150 Typ 50 80 °C Max 60 100 Units °C/W °C/W Page 1 of 5 AON2802 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C ±10 µA 1.05 1.5 V 49 60 77 94 VGS=4.5V, ID=1A 54 68 mΩ VGS=2.5V, ID=1A 66 88 mΩ 1 V 1.5 A Gate-Body leakage current VDS=0V, VGS=±10V VDS=VGS ID=250µA 0.7 ID(ON) On state drain current VGS=10V, VDS=5V 8 VGS=10V, ID=2A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=2A 12 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Crss Units V 1 VGS(th) Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 245 pF 35 pF 20 pF 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.7 10 nC Qg(4.5V) Total Gate Charge 2.6 5 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=2A 0.5 nC Qgd Gate Drain Charge 1.0 nC tD(on) Turn-On DelayTime 2 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=7.5Ω, RGEN=3Ω IF=2A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 22 ns 3.5 ns 2 ns nC 3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using