AON2803

AON2803 20V Dual P-Channel MOSFET General Description Product Summary The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-4.5V) -20V -3.8A RDS(ON) (at VGS=-4.5V) < 70mΩ RDS(ON) (at VGS =-2.5V) < 90mΩ RDS(ON) (at VGS =-1.8V) < 115mΩ DFN 2x2 Package S1 G1 VDS D2 D1 D2 Pin 1 D1 Pin 1 Top G2 S1 Gate-Source Voltage VGS TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Rev 0: August 2012 Steady-State t ≤ 10s Steady-State V A 1.5 W 0.95 TJ, TSTG Symbol t ≤ 10s ±8 -20 PD TA=70°C Units V -3 IDM TA=25°C Maximum -20 -3.8 ID TA=70°C Pulsed Drain Current C Power Dissipation A S2 Bottom Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G2 G1 S2 RθJA RθJA www.aosmd.com -55 to 150 Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON2803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 VGS=-4.5V, ID=-3.8A Static Drain-Source On-Resistance TJ=125°C Maximum Body-Diode Continuous Current VGS=0V, VDS=-10V, f=1MHz Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 94 15 -0.66 mΩ S -1 V -2 A 560 pF 80 pF 70 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgd 78 A mΩ IS Gate Source Charge 70 mΩ DYNAMIC PARAMETERS Input Capacitance Ciss Qgs 58 90 VDS=-5V, ID=-3.8A Gate resistance V 115 IS=-1A,VGS=0V Rg nA -1 85 Diode Forward Voltage Reverse Transfer Capacitance ±100 -0.6 70 Forward Transconductance Output Capacitance µA VGS=-1.8V, ID=-2A gFS Coss Units VGS=-2.5V, ID=-3A VSD Crss Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-3.8A VGS=-4.5V, VDS=-10V, RL=2.6Ω, RGEN=3Ω pF 15 30 8.5 12 Ω nC 1.2 nC 2.1 nC 7.2 ns 36 ns 53 ns tf Turn-Off Fall Time 56 ns trr Body Diode Reverse Recovery Time IF=-3.8A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. B. The value of R θJA is measured with the device mounted on a minimum pad board. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. C. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using