AON2810

AON2810 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V 2A RDS(ON) (at VGS=10V) < 44 mΩ RDS(ON) (at VGS=4.5V) < 52 mΩ RDS(ON) (at VGS=2.5V) < 74 mΩ Typical ESD protection HBM Class 3A Application • DC/DC Converters DFN 2x2A Top View D2 Pin 1 G1 S1 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current VDS Spike Power Dissipation B VGS TA=25°C Rev.1.0: August 2013 Steady-State A 36 V W 1.6 TJ, TSTG Symbol t ≤ 10s V 2.5 PD Junction and Storage Temperature Range ±12 8 VSPIKE TA=70°C Units V 1.6 IDM 100ns TA=25°C Maximum 30 2 ID TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D S2 S1 Pin 1 Continuous Drain Current G D2 D1 Bottom View D1 S2 G2 D1 D2 RθJA -55 to 150 Typ 40 65 www.aosmd.com °C Max 50 80 Units °C/W °C/W Page 1 of 5 AON2810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS，ID=250µA VGS=10V, ID=2A Static Drain-Source On-Resistance 1 44 41 52 VGS=2.5V, ID=1A 56 74 VGS=4.5V, ID=1A 9.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance V 61 VDS=5V, ID=2A Crss µA 1.4 36 Forward Transconductance Output Capacitance ±10 50 TJ=125°C gFS Coss µA 5 0.6 VGS=0V, VDS=15V, f=1MHz S V 2 A 235 pF 75 pF pF Ω 8 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.5 10 nC Qg(4.5V) Total Gate Charge 2.2 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=2A 4 mΩ 1 15 f=1MHz Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 0.3 nC 0.7 nC 3 ns 3 ns 24 ns 6 ns 7.2 ns nC VGS=10V, VDS=15V, RL=7.5Ω, RGEN=3Ω IF=2A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 1.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=80°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2013 www.aosmd.com Page 4 of 5 AON2810 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev.1.0: August 2013 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5