AON3810

AON3810 20V Dual N-Channel MOSFET General Description Product Summary The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. VDS (V) = 20V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 39mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM DFN 3x3 Top View D1 Bottom View D2 Top View S2 G2 1 8 2 7 S1 3 6 G1 4 5 D2 D2 D1 D1 1.6KΩ 1.6KΩ G1 G2 S1 S2 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current A TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead C ±12 V ID 6.8 IDM 30 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State A 2.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 8.5 Pulsed Drain Current B A Maximum 20 RθJA RθJL Typ 40 75 30 °C Max 50 95 40 Units °C/W °C/W °C/W www.aosmd.com AON3810 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V V 1 IGSS Gate-Body leakage current BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250uA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=7A TJ=55°C 5 VDS=0V, VGS=±10V V 0.7 1 16 20 24 22 28 35 VGS=4.5V, ID=6A 19 24 29 mΩ VGS=2.5V, ID=5A 25 32 39 mΩ VGS=1.8V, ID=2A 35 46 55 mΩ Forward Transconductance VDS=5V, ID=7A 21 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V A gFS Output Capacitance µA 10 TJ=125°C Coss Units 20 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=16V, VGS=0V IDSS RDS(ON) Typ mΩ S 1 V 2.5 A 280 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=7A pF 105 pF 35 pF 1.6 kΩ 5.2 nC Qgs Gate Source Charge 2.1 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 280 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=4.5V, VDS=10V, RL=1.5Ω, RGEN=3Ω 972 ns 2.35 µs 2.2 µs IF=7A, dI/dt=100A/µs, VGS=-9V 25 Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs, VGS=-9V 8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The currentand power rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using