AON3814

AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS ID (at VGS=4.5V) 20V 6A RDS(ON) (at VGS = 4.5V) < 17mW RDS(ON) (at VGS = 4V) < 18.5mW RDS(ON) (at VGS = 3.1V) < 23mW RDS(ON) (at VGS = 2.5V) < 24mW ESD Protected DFN 3x3 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 G1 D1 D1 G2 S2 S1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current F Pulsed Drain Current B F Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev 6.0:July 2019 Steady-State Steady-State A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V 40 PD TC=70°C ±12 5.3 IDM TC=25°C Power Dissipation Units V 6 ID TC=70°C Maximum 20 RqJA RqJL www.aosmd.com -55 to 150 Typ 40 75 30 °C Max 50 95 40 Units °C/W °C/W °C/W Page 1 of 5 AON3814 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±10V Gate Threshold Voltage VDS=VGS ID=250mA 0.3 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C TJ=125°C VGS=4V, ID=6A 10 mA 0.7 1.1 V 12.5 17 18.5 24 A 12.9 18.5 mW 14 23 mW VGS=2.5V, ID=6A 15.6 24 mW VGS=1.8V, ID=6A 23 Forward Transconductance VDS=5V, ID=6A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=4.5V, VDS=10V, ID=6A VGS=5V, VDS=10V, RL=1.7W, RGEN=3W mW S 1 V 3.5 A 730 920 1100 pF 110 155 200 pF 45 75 105 pF VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs mW VGS=3.1V, ID=6A gFS Coss mA 5 VGS=4.5V, ID=6A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ 2.4 kW 8.8 11 13 nC 1.6 2 2.4 nC 1.9 3.2 4.5 nC 0.3 ms 0.6 ms 7.9 ms 4.4 ms A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead R qJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using