AON3818

AON3818 24V Dual N-Channel αMOS™ General Description Product Summary • Trench Power αMOS™ LV technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant VDS ID (at VGS=4.5V) 24V 8A RDS(ON) (at VGS=4.5V) < 13.5mΩ RDS(ON) (at VGS=4.0V) < 14mΩ RDS(ON) (at VGS=3.7V) < 15mΩ RDS(ON) (at VGS=3.1V) < 17mΩ RDS(ON) (at VGS=2.5V) < 21mΩ Typical ESD protection HBM Class 2 Applications • Battery protection switch • Mobile device battery charging and discharging DFN 3x3 Top View D2 D1 Bottom View Top View 1 2 3 4 S2 G2 S1 G1 8 D1/D2 7 6 5 D1/D2 G1 G2 D1/D2 D1/D2 S2 S1 Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON3818 DFN 3x3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.2.0: July 2019 AD t ≤ 10s Steady-State Steady-State A 2.7 W 1.7 TJ, TSTG Symbol A V 32 PD TA=70°C ±12 6 IDM TA=25°C Power Dissipation B Units V 8 ID TA=70°C Maximum 24 RqJA RqJL -55 to 150 Typ 35 60 15 www.aosmd.com °C Max 45 75 20 Units °C/W °C/W °C/W Page 1 of 5 AON3818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250μA, VGS=0V Typ Max Units 24 V VDS=24V, VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±10V ±10 μA Gate Threshold Voltage VDS=VGS, ID=250mA 0.4 0.8 1.2 V VGS=4.5V, ID=8A 7.5 10.8 13.5 TJ=55°C TJ=125°C RDS(ON) Static Drain-Source On-Resistance 5 10.5 15 19 VGS=4.0V, ID=6A 7.8 11.2 14 VGS=3.7V, ID=6A 8 11.5 15 VGS=3.1V, ID=4A 8 12.5 17 VGS=2.5V, ID=4A 8.6 14.8 21 gFS Forward Transconductance VDS=5V, ID=8A 42 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=12V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time S 1 V 4 A 840 pF 210 pF 205 pF 2 kΩ 9.5 VGS=4.5V, VDS=12V, ID=8A mΩ 15 nC 1.5 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 0.3 μs 0.8 μs 1.7 μs 5.2 μs VGS=4.5V, VDS=12V, RL=1.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 0.0001 0.001 0.01 100 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: July 2019 www.aosmd.com Page 4 of 5 AON3818 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: July 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5