AON3820

AON3820 24V Dual N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant ID (at VGS=4.5V) 24V 8A RDS(ON) (at VGS=4.5V) < 8.9mΩ RDS(ON) (at VGS=4.0V) < 9.5mΩ RDS(ON) (at VGS=3.7V) < 9.6mΩ RDS(ON) (at VGS=3.1V) < 10mΩ RDS(ON) (at VGS=2.5V) < 11.8mΩ Typical ESD protection HBM Class 3A Applications • Battery protection switch • Mobile device battery charging and discharging DFN 3x3 Top View D2 D1 Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 D1/D2 7 6 5 D1/D2 D1/D2 G2 G1 D1/D2 S2 S1 Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON3820 DFN 3x3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: August 2015 Steady-State Steady-State RθJA RθJL A 2.0 W 1.3 TJ, TSTG Symbol t ≤ 10s V 32 PD TA=70°C ±12 6.2 IDM TA=25°C B Units V 8 ID TA=70°C Maximum 24 -55 to 150 Typ 50 70 30 www.aosmd.com °C Max 60 85 35 Units °C/W °C/W °C/W Page 1 of 5 AON3820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA V TJ=55°C TJ=125°C ±10 µA 0.5 0.9 1.3 V 5 7.1 8.9 7 10 12.5 VGS=4.0V, ID=6A 5.1 7.3 9.5 VGS=3.8V, ID=6A 5.2 7.4 9.6 VGS=3.1V, ID=4A 5.4 7.8 10 VGS=2.5V, ID=4A 6.2 9.0 11.8 VDS=5V, ID=8A 70 VSD Diode Forward Voltage IS=1A, VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=12V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time µA 5 Forward Transconductance gFS Units 1 VGS=4.5V, ID=8A Static Drain-Source On-Resistance Max 24 VDS=24V, VGS=0V IDSS RDS(ON) Typ S 1 V 3 A 1325 pF 250 pF 220 pF 1.35 kΩ 12.5 VGS=4.5V, VDS=12V, ID=8A mΩ 20 nC 4.1 nC Gate Drain Charge 6.0 nC Turn-On DelayTime 0.9 µs 1.9 µs 1.8 µs 3.4 µs VGS=4.5V, VDS=12V, RL=1.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1E-05 0.0001 0.001 0.01 100 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2015 www.aosmd.com Page 4 of 5 AON3820 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5