AON4407

AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected D DFN 3x2 Top View Bottom View Pin 1 D D D D D D G S Rg G S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation B C TA=25°C Junction and Storage Temperature Range -7 IDM -60 t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. A 2.5 W 1.6 TJ, TSTG Symbol AD V ID PD TA=70°C A ±8 -9 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead -12 Units V Maximum RθJA RθJL -55 to 150 Typ 42 74 25 Max 50 90 30 °C Units °C/W °C/W °C/W www.aosmd.com AON4407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -12 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 TJ=55°C VGS=-4.5V, ID=-9A 25 mΩ 24 31 mΩ VGS=-1.5V, ID=-7A 29 38 mΩ 45 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance -0.53 1740 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Gate Source Charge A 20 IS=-1A,VGS=0V Qgs V VGS=-1.8V, ID=-7.5A Diode Forward Voltage Gate resistance -0.85 VGS=-2.5V, ID=-8.5A VSD Rg µA 26 VDS=-5V, ID=-9A Reverse Transfer Capacitance ±10 22 Forward Transconductance Crss -0.5 µA 20 gFS Output Capacitance -5 16.5 TJ=125°C Coss Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-12V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-6V, ID=-9A mΩ S -1 V -2.5 A 2100 pF 334 pF 200 pF 1.3 1.7 kΩ 19 23 nC 4.5 nC Qgd Gate Drain Charge 5.3 nC tD(on) Turn-On DelayTime 240 ns tr Turn-On Rise Time 580 ns tD(off) Turn-Off DelayTime 7 µs tf Turn-Off Fall Time 4.2 µs VGS=-4.5V, VDS=-6V, RL=0.67Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/µs 22 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs 17 27 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using