AON4407L

AON4407L P-Channel Enhancement Mode Field Effect Transistor General Description The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected! DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G Rg D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -12 ±8 -9 -7 -60 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead Symbol A AD t ≤ 10s Steady State Steady State RθJA RθJL Typ 42 74 25 Max 50 90 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-9A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A VGS=-1.8V, ID=-7.5A VGS=-1.5V, ID=-7A gFS VSD IS Forward Transconductance VDS=-5V, ID=-9A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.35 -60 16.5 22 20 24 29 45 -0.53 -1 -2.5 1740 VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz 334 200 1.3 19 VGS=-4.5V, VDS=-6V, ID=-9A 4.5 5.3 240 VGS=-4.5V, VDS=-6V, RL=0.67Ω, RGEN=3Ω IF=-9A, dI/dt=100A/µs 580 7 4.2 22 17 27 1.7 23 2100 20 26 25 31 38 -0.5 Min -12 -1 -5 ±10 -0.85 Typ Max Units V µA µA V A mΩ mΩ mΩ mΩ S V A pF pF pF kΩ nC nC nC ns ns µs µs ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using