AON4420L

AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. Features VDS (V) = 30V ID = 10A RDS(ON) < 19mΩ RDS(ON) < 25mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current Continuous Drain Current A Power Dissipation A C Maximum 30 ±20 50 10 8 1.6 1 -55 to 150 Units V V IDM ID PD TJ, TSTG TA=25°C TA=70°C TA=25°C TA=70°C A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 34 66 20 Max 40 80 25 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±20V VDS = VGS ID = 250µA VGS = 10V, VDS = 5V VGS = 10V, ID = 10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 8A Forward Transconductance VDS = 5V, ID = 10A IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current 440 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 35 2 8 VGS=10V, VDS=15V, ID=10A 4 1.5 1.3 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω IF=10A, dI/dt=300A/µs 8 11 TJ=125°C 1.4 50 16 27 21 30 0.75 1 3 550 110 55 4 9.8 4.6 1.8 2.2 5 3.2 24 6 11 13 14 16 660 140 80 6 12 5.5 2.2 3 26 S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC 20 mΩ 1.9 Min 30 1 5 ±100 2.5 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=300A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 10V 40 30 ID (A) 20 VGS=3V 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 30 Normalized On-Resistance 1.8 1.6 1.4 1.2 1.0 0.8 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=10A 1E+01 1E+00 1E-01 IS (A) 1E-02 125°C VGS=10V ID=10A VGS=4.5V ID=8A 10 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 4.5V 4V 3.5V ID(A) 40 30 20 25°C 125°C 50 VDS=5V 25 RDS(ON) (mΩ) VGS=4.5V 20 15 VGS=10V 10 0 2 4 IF=-6.5A, 8 dI/dt=100A/µs 6 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 RDS(ON) (mΩ) 40 125°C 1E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C 25°C OUT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 800 VDS=15V ID=10A Capacitance (pF) 600 Ciss 400 Coss 200 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10µs 100µs 1ms 1 0 ms 100ms 0.1 TJ(Max)=150°C TA=25°C DC 10s 1000 TJ(Max)=150°C TA=25°C 10 ID (Amps) 1 Power (W) 100 10 0.01 0.1 1 IF=-6.5A, dI/dt=100A/µs 10 100 VDS (Volts) 1 0.00001 0.001 0.1 10 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 T on FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L Gate Charge Test Circuit & Waveform Vgs Qg + VDC 10V VDC DUT Vgs Ig + Vds - Qgs Qgd Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs Rg Vgs DUT VDC + Vdd Vgs td(on) ton tr td(off) toff tf 90% 10% Diode Recovery Test Circuit & Waveforms Vds + DUT Vgs t rr Q rr = - Idt Vds - Isd Vgs L Isd IF VDC + Vdd Vds dI/dt I RM Vdd Ig Alpha & Omega Semiconductor, Ltd. www.aosmd.com