AON4421

AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch. VDS -30V ID (at VGS=-10V) -8A RDS(ON) (at VGS=-10V) < 26mW RDS(ON) (at VGS=-4.5V) < 34mW ESD Protected -RoHS Compliant -Halogen Free D DFN 3x2 Top View Bottom View Pin 1 D 1 8 D 2 7 D 3 6 G 4 5 D D G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.2.1: June 2022 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V -60 PD TA=70°C ±20 -6 IDM TA=25°C Units V -8 ID TA=70°C Maximum -30 RqJA RqJL www.aosmd.com -55 to 150 Typ 30 55 25 °C Max 40 70 30 Units °C/W °C/W °C/W Page 1 of 5 AON4421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=-250mA -0.8 VGS=-10V, VDS=-5V -60 TJ=55°C VGS=-10V, ID=-8A -5 ±10 mA V 21 26 28 34 34 A VGS=-4.5V, ID=-7A 27 gFS Forward Transconductance VDS=-5V, ID=-8A 22 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -0.74 930 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz mA -1.8 Static Drain-Source On-Resistance TJ=125°C Units -1.3 RDS(ON) Coss Max V VDS=-30V, VGS=0V IDSS ID(ON) Typ mW mW S -1 V -3 A 1120 pF 170 pF 120 pF 8 W SWITCHING PARAMETERS Qg(-10V) Total Gate Charge 17.6 21 nC Qg(-4.5V) Total Gate Charge 8.6 10 nC VGS=-10V, VDS=-15V, ID=-8A Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 7 ns tD(off) Turn-Off DelayTime 40 ns tf trr Turn-Off Fall Time IF=-8A, dI/dt=500A/ms 18 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/ms 32 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.9W, RGEN=3W 30 ns 22 ns nC A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using