AON4604

AON4604 Complementary Enhancement Mode Field Effect Transistor General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 20V ID = 5.4A RDS(ON) < 42mΩ RDS(ON) < 52mΩ RDS(ON) < 72mΩ p-channel -20V -3.8A (VGS= ±4.5V) < 90mΩ (VGS = ±4.5V) < 120mΩ (VGS = ±2.5V) < 170mΩ (VGS = ±1.8V) D1 D2 DFN3X2-8L S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 S1 G2 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG 5.4 4.3 15 1.9 1.2 -55 to 150 p-channel Units V V A Max p-channel -20 ±8 -3.8 -3.0 -15 1.9 1.2 -55 to 150 W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 51.5 82 37 Typ 51.5 82 37 Max 65 100 50 Max 65 100 50 Units °C/W °C/W °C/W Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4604 n-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=5.4A Static Drain-Source On-Resistance TJ=125°C VGS=2.5V, ID=4.8A VGS=1.8V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=5.4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.4 15 34 50 43 57 11 0.8 1 2.5 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 66 44 3 6.5 VGS=4.5V, VDS=10V, ID=5.4A 0.8 2.1 7 VGS=5V, VDS=10V, RL=1.9Ω, RGEN=6Ω IF=5.4A, dI/dt=100A/µs 11.2 36.5 12.5 15.2 4.7 42 70 52 72 0.7 Min 20 1 5 100 1 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5.4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using