AON5816

AON5816 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary • Low RDS(ON) • With ESD Protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant VDS ID (at VGS=4.5V) 20V 12A RDS(ON) (at VGS=4.5V) < 6.5mΩ RDS(ON) (at VGS=3.7V) < 7mΩ RDS(ON) (at VGS=3.1V) < 7.8mΩ RDS(ON) (at VGS=2.5V) < 8.5mΩ Typical ESD protection HBM Class 2 Application • Battery protection switch • Mobile device battery charging and discharging DFN 2X5A S2 S2 G2 D1/D2 D2 D1 Bottom View Top View G1 G2 S1 S1 G1 S1 S2 Orderable Part Number Package Type Form Minimum Order Quantity AON5816 DFN2X5A Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev1.0: November 2016 Steady-State Steady-State A 1.7 W 1 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 110 PDSM TA=70°C ±12 10 IDM TA=25°C Power Dissipation A Units V 12 ID TA=70°C Maximum 20 RθJA RθJC www.aosmd.com Typ 30 61 4.5 °C Max 40 75 5.5 Units °C/W °C/W °C/W Page 1 of 6 AON5816 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA VGS=4.5V, ID=12A 10 µA 0.9 1.3 V 5 6.5 6.9 9 VGS=3.7V, ID=10A 5.2 7 mΩ VGS=3.1V, ID=8A 5.5 7.8 mΩ VGS=2.5V, ID=8A 6.2 8.5 mΩ 1 V 3 A TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=12A 100 VSD Diode Forward Voltage IS=1A,VGS=0V 0.63 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 0.5 Units V 1 TJ=55°C VGS(th) Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ VGS=4.5V, VDS=10V, RL=0.8Ω, RGEN=3Ω S 2170 pF 330 pF 270 pF 3.5 Ω 22 VGS=4.5V, VDS=10V, ID=12A mΩ 35 nC 3 nC 6 nC 12 ns 24 ns 65 ns tf Turn-Off Fall Time 27 ns trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 23 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.5°C/W 40 1 0.1 PD Single Pulse 0.01 1E-05 0.0001 Ton 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1.0: November 2016 www.aosmd.com Page 4 of 6 AON5816 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 25 12 Current rating ID(A) Power Dissipation (W) 30 20 15 10 9 6 3 5 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 0.001 1E-05 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev1.0: November 2016 www.aosmd.com Page 5 of 6 AON5816 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R esis tive S w itching Te st C irc uit & W av eform s RL V ds V ds DUT V gs + VD C 90 % Vdd - Rg 1 0% V gs Vgs t d(on ) tr t d (o ff) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev1.0: November 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6