AON6152A

AON6152A 45V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 45V 100A RDS(ON) (at VGS=10V) < 1.15mΩ RDS(ON) (at VGS=4.5V) < 1.85mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications DFN5x6 D Top View Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6152A DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G VDS Spike C Power Dissipation B L=0.3mH C 10μs TC=25°C Junction and Storage Temperature Range Rev.1.0: November 2019 IAS 60 A EAS 540 mJ 54 V 208 Steady-State Steady-State W 83 TJ, TSTG Symbol t ≤ 10s A 47 7.3 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 58 PD TC=100°C A 100 400 VSPIKE TA=25°C Power Dissipation A 100 IDSM TA=70°C I V IDM TA=25°C Avalanche energy ±20 ID TC=100°C Pulsed Drain Current C Avalanche Current Units V VGS TC=25°C Continuous Drain Current Maximum 45 RqJA RqJC www.aosmd.com W 4.7 -55 to 150 Typ 14 40 0.45 °C Max 17 50 0.6 Units °C/W °C/W °C/W Page 1 of 6 AON6152A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ 45 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.8 2.3 V 0.9 1.15 1.5 1.9 1.85 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 1.3 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A,VGS=0V 0.66 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=22.5V, f=1MHz μA 5 1.3 Units V VDS=45V, VGS=0V IDSS Coss Max mΩ mΩ S 1 V 100 A 6800 8500 10000 pF 780 1120 1460 pF 25 90 155 pF 0.6 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 110 155 nC Qg(4.5V) Total Gate Charge 48 70 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=22.5V, ID=20A 24 nC Gate Drain Charge 7.5 nC tD(on) Turn-On DelayTime 16 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=22.5V, RL=1.125W, RGEN=3W 6 ns 75 ns 6.5 ns IF=20A, dI/dt=400A/ms 25 Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/ms 74 ns nC Body Diode Reverse Recovery Time A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=0.6°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2019 www.aosmd.com Page 4 of 6 AON6152A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 150 Current rating I D(A) Power Dissipation (W) 200 150 100 50 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2019 www.aosmd.com Page 5 of 6 AON6152A AA Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6