AON6156

AON6156 45V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 45V 100A RDS(ON) (at VGS=10V) < 2.6mΩ RDS(ON) (at VGS=4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6156 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.3mH C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2015 36 32 A EAS 154 mJ VSPIKE 54 V 78 Steady-State Steady-State W 31 6.2 W 4.0 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 29 PD TC=100°C V 260 IDSM TA=70°C ±20 82 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C Maximum 45 RθJA RθJC -55 to 150 Typ 15 40 1.3 www.aosmd.com Max 20 50 1.6 °C Units °C/W °C/W °C/W Page 1 of 6 AON6156 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 1.9 2.5 V 2.1 2.6 3.4 4.2 4.0 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 3.1 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=22.5V, f=1MHz mΩ S 1 V 90 A 3975 pF 545 pF 62 pF 0.7 1.1 Ω 50 70 nC Qg(4.5V) Total Gate Charge 23 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=22.5V, ID=20A VGS=10V, VDS=22.5V, RL=1.125Ω, RGEN=3Ω 0.3 mΩ SWITCHING PARAMETERS Total Gate Charge Qg(10V) tD(off) f=1MHz µA 5 VGS=10V, ID=20A Coss Units 45 VDS=45V, VGS=0V IDSS Max 11 nC 5 nC 11 ns 4 ns 38 ns 4 ns IF=20A, di/dt=400A/µs 19 Body Diode Reverse Recovery Charge IF=20A, di/dt=400A/µs 43 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 10 500 Power (W) ID (Amps) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ZθJC Normalized Transient Thermal Resistance Coss Crss 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 1 PDM Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2015 www.aosmd.com Page 4 of 6 AON6156 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 150 Current rating ID (A) Power Dissipation (W) 80 60 40 20 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM Single Pulse 0.01 Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2015 www.aosmd.com Page 5 of 6 AON6156 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6