AON6204

AON6204 30V N-Channel MOSFET General Description Product Summary The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 30V 24A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS = 4.5V) < 18mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C ±20 V A 19 IDM 110 14 IDSM TA=70°C Units V 24 ID TC=100°C Maximum 30 A 11 Avalanche Current C IAS, IAR 21 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 22 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1 : March 2011 1.9 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.2 TJ, TSTG Symbol t ≤ 10s W 13 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD TC=100°C -55 to 150 Typ 29 56 3.3 °C Max 35 67 4 Units °C/W °C/W °C/W Page 1 of 6 AON6204 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 110 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 100 nA 1.9 2.4 V 10 12 14.5 18 14.5 18 mΩ 1 V 30 A A 33 0.72 mΩ S 400 510 670 pF VGS=0V, VDS=15V, f=1MHz 150 220 310 pF 13 22 38 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 8 10 nC Qg(4.5V) Total Gate Charge 2.6 3.5 4.0 nC 1.6 2 2.4 nC 0.8 1.4 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.3 ns 8 ns 15.8 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 3.4 11 14 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13 17 21 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using