AON6224

AON6224 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 100V 34A RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6224 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: July 2015 IAS 20 A EAS 20 mJ 120 V 56.5 6.2 Steady-State Steady-State W 4.0 TJ, TSTG Symbol t ≤ 10s W 22.5 PDSM TA=70°C A 13 PD TA=25°C Power Dissipation A A 16 VSPIKE TC=100°C V 104 IDSM TA=70°C ±20 31 IDM TA=25°C Continuous Drain Current Units V 34 ID TC=100°C Maximum 100 RθJA RθJC -55 to 150 Typ 15 40 1.8 www.aosmd.com Max 20 50 2.2 °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.4 ±100 nA 1.9 2.4 V 10 12 17.5 21 12.5 15.5 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 IS Maximum Body-Diode Continuous Current G TJ=125°C VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Output Capacitance Units V VDS=100V, VGS=0V IDSS Coss Max VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1 V 34 A 2420 pF 170 pF 11 pF 0.55 0.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33 50 nC Qg(4.5V) Total Gate Charge 15 25 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=50V, ID=20A 0.2 7 nC Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs Qrr µ Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 128 Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 3 ns 25 ns 4 ns 27 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2015 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 50 Power Dissipation (W) 30 Current rating ID (A) 40 30 20 10 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2015 www.aosmd.com Page 5 of 6 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs td(on) tr t d(off) t on tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: July 2015 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6