AON6232

AON6232 40V N-Channel MOSFET General Description Product Summary VDS The AON6232 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. ID (at VGS=10V) 40V 85A RDS(ON) (at VGS=10V) < 2.5mΩ RDS(ON) (at VGS = 4.5V) < 3.6mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 260 22 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 40 A 17 Avalanche Current C IAS, IAR 60 A Avalanche energy L=0.1mH C EAS, EAR 180 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: August 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 14 40 1.1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6232 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 260 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VGS(th) RDS(ON) Typ 100 nA 1.8 2.3 V 2.05 2.5 3.2 3.9 2.8 3.6 mΩ 1 V 85 A A 100 0.68 mΩ S 2530 3165 3800 pF VGS=0V, VDS=20V, f=1MHz 630 905 1180 pF 15 52.5 90 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.85 1.3 Ω VGS=10V, VDS=20V, ID=20A 33 42 51 nC 12 18.2 24 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 9.6 nC 2.8 nC 8.7 ns 4.5 ns 33.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22.5 30 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 41 59 77 6.2 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using