AON6234
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6234 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
ID (at VGS=10V)
40V
85A
RDS(ON) (at VGS=10V)
< 3.4mΩ
RDS(ON) (at VGS = 4.5V)
< 5.0mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
TA=70°C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: August 2011
IAS, IAR
50
A
EAS, EAR
125
mJ
83
Steady-State
Steady-State
W
33
2.3
RθJA
RθJC
www.aosmd.com
W
1.4
TJ, TSTG
Symbol
t ≤ 10s
A
15
PDSM
TA=70°C
A
20
PD
TC=100°C
V
220
IDSM
C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
C
Maximum
40
-55 to 150
Typ
14
40
1.1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6234
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=40V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
220
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
IGSS
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VGS(th)
RDS(ON)
Typ
100
nA
1.9
2.4
V
2.7
3.4
4.2
5.2
3.9
5.0
A
90
0.7
mΩ
mΩ
S
1
V
85
A
1865
2335
2805
pF
VGS=0V, VDS=20V, f=1MHz
425
612
795
pF
13
45
77
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
Ω
25
33.5
41
nC
10
15
20
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
nC
7
nC
4.5
nC
8
ns
3
ns
26
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
17.5
23
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
33
47.5
62
4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
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