AON6236

AON6236 40V N-Channel MOSFET General Description Product Summary VDS The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. 40V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS = 4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 120 19 IDSM TA=70°C ±20 24 IDM TA=25°C Units V 30 ID TC=100°C Maximum 40 A 15 Avalanche Current C IAS 33 A Avalanche energy L=0.1mH C TC=25°C EAS 54 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Oct. 2011 4.2 Steady-State Steady-State RθJA RθJC W 2.7 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 15.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 39 PD TC=100°C Typ 24 53 2.6 www.aosmd.com °C Max 30 64 3.2 Units °C/W °C/W °C/W Page 1 of 6 AON6236 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C ±100 nA 2.4 V 5.6 7 8.4 10.5 VGS=4.5V, ID=20A 8 10.5 mΩ 80 1 V 30 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 1.85 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz A 0.72 mΩ S 1225 pF 318 pF 26.5 pF 1.7 3.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18.5 26 nC Qg(4.5V) Total Gate Charge 8.2 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs IF=20A, dI/dt=500A/µs 3.5 nC 2.5 nC 6 ns 2.8 ns 23.5 ns 3 ns 14 ns nC 32.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using