AON6242

AON6242 60V N-Channel MOSFET General Description Product Summary VDS The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 60V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 3.6mΩ RDS(ON) (at VGS = 4.5V) < 4.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 240 18.5 IDSM TA=70°C ±20 66 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 60 A 14.5 C IAR 75 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 281 mJ Avalanche Current Power Dissipation B Power Dissipation A TC=100°C TA=25°C Junction and Storage Temperature Range Rev 0: July 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6242 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 60 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 240 Units V VDS=60V, VGS=0V VGS(th) 100 nA 2 2.5 V 3 3.6 4.8 5.8 VGS=4.5V, ID=16A 3.6 4.5 mΩ 1 V 85 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 140 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 4240 5305 6370 pF VGS=0V, VDS=30V, f=1MHz 375 540 705 pF 6.5 22 38 pF VGS=0V, VDS=0V, f=1MHz 0.45 0.9 1.35 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 48 60 72 nC Qg(4.5V) Total Gate Charge 18 23 28 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=30V, ID=20A nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17 24.5 32 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 87 125 163 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω nC 16 13 ns 4 ns 47 ns 6.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using