AON6276

AON6276 80V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss VDS 80V 100A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 2.6mΩ RDS(ON) (at VGS=6V) < 3.5mΩ 100% UIS Tested 100% Rg Tested • Secondary Synchronous Rectification MOSFET for Server and Telecom D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6276 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2016 IAS 73 A EAS 266 mJ 96 V 215 7.3 Steady-State Steady-State W 4.7 TJ, TSTG Symbol t ≤ 10s W 86 PDSM TA=70°C A 31 PD TA=25°C Power Dissipation A A 38.5 VSPIKE TC=100°C V 355 IDSM TA=70°C ±20 100 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C Maximum 80 RθJA RθJC -55 to 150 Typ 14 40 0.43 www.aosmd.com °C Max 17 50 0.58 Units °C/W °C/W °C/W Page 1 of 6 AON6276 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 80 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.6 3.2 V 2.2 2.6 3.7 4.5 3.5 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 2.8 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs Gate Source Charge Qgd VGS=10V, VDS=40V, ID=20A µA 5 2.1 0.3 Units V VDS=80V, VGS=0V IDSS Max mΩ mΩ S 1 V 100 A 4940 pF 770 pF 40 pF 0.7 1.2 Ω 68 100 nC 14.5 nC Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time 8.5 ns tD(off) Turn-Off DelayTime 40 ns tf trr Turn-Off Fall Time 10 ns IF=20A, di/dt=500A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 168 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=40V, RL=2.0Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.58°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2016 www.aosmd.com Page 4 of 6 AON6276 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 120 100 Current rating ID (A) Power Dissipation (W) 200 150 100 50 80 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2016 www.aosmd.com Page 5 of 6 AON6276 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6