AON6280

AON6280 80V N-Channel AlphaSGT TM General Description Product Summary The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 85A < 4.1mW < 5.0mW 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain ID TC=100°C Current Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C Maximum 80 ±20 100 65 IDM Units V V A 230 17 13 IDSM A Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C EAS mJ Junction and Storage Temperature Range TJ, TSTG 125 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 2.0 : June. 2022 PD PDSM Symbol A AD t ≤ 10s Steady-State Steady-State RqJA RqJC Typ 14 40 1 www.aosmd.com W W °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6280 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Typ Max 2.6 1 5 ±100 3.2 80 V VDS=80V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=6V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250mA VGS=10V, VDS=5V VGS=10V, ID=20A Gate Threshold Voltage On state drain current 2 230 3.4 5.8 4 76 0.7 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, VDS=40V, ID=20A VGS=10V, VDS=40V, RL=2W, RGEN=3W IF=20A, dI/dt=500A/ms IF=20A, dI/dt=500A/ms 0.3 Units 3930 592 66 0.7 58 15 14 13 6 32 9 36 153 4.1 7 5 mA nA V A mW 1 95 mW S V A 1.1 pF pF pF W 82 nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using