AON6284

AON6284 80V N-Channel MOSFET General Description Product Summary VDS The AON6284 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 80V 78A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.1mΩ RDS(ON) (at VGS=6V) < 10mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: April 2013 IAS 40 A EAS 80 mJ 78 Steady-State Steady-State W 31 7.4 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 19 PDSM TA=70°C A 24 PD TC=100°C V 170 IDSM TA=70°C ±20 49 IDM TA=25°C Continuous Drain Current Units V 78 ID TC=100°C Maximum 80 -55 to 150 Typ 14 40 1.3 www.aosmd.com °C Max 17 55 1.6 Units °C/W °C/W °C/W Page 1 of 6 AON6284 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 170 TJ=55°C ±100 nA 2.8 3.3 V 5.9 7.1 9.5 11.4 VGS=6V, ID=20A 7.6 10 mΩ 66 1 V 78 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=40V, f=1MHz Gate Source Charge Qgd tD(on) VGS=10V, VDS=40V, ID=20A 0.6 mΩ S 2162 pF 300 pF 16 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A 0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Rg µA 5 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ pF 1.35 2.1 28 40 Ω nC 8.5 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 9 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.5 ns 23 ns tf Turn-Off Fall Time 5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 26 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 118 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: April 2013 www.aosmd.com Page 4 of 6 AON6284 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=25°C TA=150°C TA=125°C 10 1 80 60 40 20 0 1 10 100 1000 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 50 60 40 17 5 2 10 100 10 20 1 1E-05 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 T 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: April 2013 www.aosmd.com Page 5 of 6 AON6284 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: April 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6