AON6290

AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. ID (at VGS=10V) 100V 85A RDS(ON) (at VGS=10V) < 4.6mW RDS(ON) (at VGS=6V) < 6.2mW 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View S S S 1 8 D 2 7 3 6 D D G 4 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 260 28 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C C Maximum 100 A 23 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C TC=25°C EAS 180 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.3.0: March 2014 7.3 Steady-State Steady-State RqJA RqJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 83 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 208 PD TC=100°C -55 to 150 Typ 14 40 0.46 www.aosmd.com °C Max 17 55 0.6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 nA 3.4 V 3.8 4.6 6.5 7.9 VGS=6V, ID=20A 4.7 6.2 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.8 2.2 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mW mW S 1 V 85 A 4600 pF 415 pF 27 pF 0.75 1.2 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 90 nC Qg(4.5V) Total Gate Charge 28.5 40 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A 0.3 Qgs Gate Source Charge 17 nC Qgd tD(on) Gate Drain Charge 10 nC Turn-On DelayTime 14.5 tr Turn-On Rise Time ns 5.5 tD(off) Turn-Off DelayTime ns 37 ns tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/ms 7.5 ns 40 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 230 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using