AON6292

AON6292 100V N-Channel MOSFET General Description Product Summary VDS • The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=10V) < 6mΩ RDS(ON) (at VGS=6V) < 8.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View 100V 85A ID (at VGS=10V) D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 220 24 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C Maximum 100 A 20 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C TC=25°C EAS 125 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 1.0: February 2016 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 62.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 156 PD -55 to 150 Typ 14 40 0.55 www.aosmd.com °C Max 17 55 0.8 Units °C/W °C/W °C/W Page 1 of 6 AON6292 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 220 TJ=55°C ±100 nA 2.8 3.4 V 4.8 6 8.6 10.8 VGS=6V, ID=20A 6 8.5 mΩ 1 V 85 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 60 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz S 3830 pF 327 pF 16.5 VGS=0V, VDS=0V, f=1MHz 0.3 mΩ 0.65 pF 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 45 63 nC Qg(4.5V) Total Gate Charge 15.5 22 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=50V, ID=20A VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 16 nC 7 nC 13 ns 4 ns 26 ns tf Turn-Off Fall Time 4.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 225 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using