AON6294

AON6294 100V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application VDS 100V 52A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS=6V) < 14mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6294 DFN5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current V A 80 17 IDSM TA=70°C ±20 33 IDM TA=25°C Units V 52 ID TC=100°C C Maximum 100 A 14 Avalanche Current C IAS 33 A Avalanche energy L=0.1mH C EAS 54 mJ VDS Spike VSPIKE 120 V 10µs TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: October 2013 6.2 Steady-State Steady-State W 4.0 TJ, TSTG Symbol t ≤ 10s W 23 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 57 RθJA RθJC -55 to 150 Typ 15 40 1.8 www.aosmd.com °C Max 20 50 2.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 2.4 ±100 nA 2.95 3.5 V 8.4 10 15.5 19 14 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 11 gFS Forward Transconductance VDS=5V, ID=20A 34 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.72 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time mΩ mΩ S 1 V 52 A 2265 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs µA 5 VGS=10V, ID=20A Coss Units V VDS=100V, VGS=0V IDSS Max VGS=10V, VDS=50V, ID=20A 0.7 pF 195 pF 10 pF 1.5 2.3 28 40 Ω nC 10 nC Gate Drain Charge 4 nC Turn-On DelayTime 10.5 ns 4 ns 20 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 4.5 ns IF=20A, dI/dt=500A/µs 35 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 195 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.2°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 80 80 60 60 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 0 40 20 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6