AON6312

AON6312 30V N-Channel MOSFET General Description Product Summary VDS 30V 130A • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=10V) < 1.85mΩ RDS(ON) (at VGS=4.5V) < 2.5mΩ Applications 100% UIS Tested 100% Rg Tested ID (at VGS=10V) • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 PIN1 G S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6312 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.01mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: September 2017 IAS 80 A EAS 32 mJ VSPIKE 36 V 50 Steady-State Steady-State W 20 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 37 PDSM TA=70°C A 46 PD TA=25°C Power Dissipation A V 260 IDSM TA=70°C ±20 83 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 130 ID TC=100°C Maximum 30 -55 to 150 Typ 15 40 1.9 www.aosmd.com °C Max 20 50 2.5 Units °C/W °C/W °C/W Page 1 of 6 AON6312 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA TJ=55°C ±100 nA 2.2 V 1.5 1.85 2.0 2.45 VGS=4.5V, ID=20A 2.0 2.5 mΩ 1 V 60 A 1.3 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 125 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 1.1 mΩ S 3100 pF 875 pF 105 f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) µA 5 1.75 Static Drain-Source On-Resistance Output Capacitance Units V 1 VGS=10V, ID=20A Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ pF 2.3 3.5 Ω 43 65 nC 20 30 nC 8.5 nC nC Qgd Gate Drain Charge 6 tD(on) Turn-On DelayTime 11.5 ns tr Turn-On Rise Time 5 ns tD(off) Turn-Off DelayTime 40 ns tf trr Qrr Turn-Off Fall Time 8 ns IF=20A, di/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 17 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Body Diode Reverse Recovery Time 36 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: September 2017 www.aosmd.com Page 2 of 6 AON6312 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 3.5V 80 80 60 10V 40 ID (A) ID (A) 60 3V 125°C 25°C 40 20 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 2 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 1.6 3 RDS(ON) (mΩ) 3 VGS=4.5V 2 1 VGS=10V VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 3 2 1.0E-02 25°C 1.0E-03 25°C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6312 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=15V ID=20A 4000 3500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2500 2000 1500 Coss 1000 2 Crss 500 0 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 20 25 30 TJ(Max)=150°C TC=25°C 400 10µs 100µs 1ms 10ms 1.0 DC Power (W) ID (Amps) 15 500 10.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.5°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: September 2017 www.aosmd.com Page 4 of 6 AON6312 150 150 120 120 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 60 30 90 60 30 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: September 2017 www.aosmd.com Page 5 of 6 AON6312 Figure A:Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6