AON6354

AON6354 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 83A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 3.3mΩ RDS(ON) (at VGS=4.5V) < 5.2mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • See Note I DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6354 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.01mH VDS Spike 10µs TC=25°C Power Dissipation B C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.0: September 2017 IAS 64 A EAS 20 mJ VSPIKE 36 V 36 Steady-State Steady-State W 14 5.6 RθJA RθJC W 3.6 TJ, TSTG Symbol t ≤ 10s A 26 PDSM TA=70°C A 33 PD TC=100°C V 205 IDSM TA=70°C ±20 52 IDM TA=25°C Continuous Drain Current Units V 83 ID TC=100°C Maximum 30 -55 to 150 Typ 18 40 2.8 www.aosmd.com °C Max 22 55 3.5 Units °C/W °C/W °C/W Page 1 of 6 AON6354 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.8 2.2 V 2.75 3.3 3.6 4.4 4 5.2 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 1.4 mΩ mΩ S 1 V 40 A 1330 pF 360 pF 55 pF 1.5 2.3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 20 35 nC Qg(4.5V) Total Gate Charge 10 18 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=20A 0.7 Units V VDS=30V, VGS=0V IDSS Max nC 3.5 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 8 ns 3 ns 20 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 3 ns IF=20A, di/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 17 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: September 2017 www.aosmd.com Page 2 of 6 AON6354 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 80 80 10V 3.5V 60 ID (A) ID (A) 60 40 40 125°C 25°C VGS=3V 20 20 0 0 0 1 2 3 4 5 0 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 6 1.6 Normalized On-Resistance 5 RDS(ON) (mΩ) 1 VGS=4.5V 4 3 2 VGS=10V 1 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 1.0E+01 ID=20A 1.0E+00 1.0E-01 6 IS (A) RDS(ON) (mΩ) 8 125°C 125°C 1.0E-02 4 25°C 1.0E-03 2 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6354 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=15V ID=20A 1600 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1200 800 Coss 2 400 0 0 Crss 0 5 10 15 20 0 25 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 500 10µs RDS(ON) limited 100µs 10.0 1ms DC 10ms 1.0 0.1 300 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 400 10µs Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 10 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: September 2017 www.aosmd.com Page 4 of 6 AON6354 50 100 40 80 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: September 2017 www.aosmd.com Page 5 of 6 AON6354 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6