AON6362

AON6362 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 60A RDS(ON) (at VGS=10V) < 5.2mΩ RDS(ON) (at VGS=4.5V) < 8.6mΩ 100% UIS Tested 100% Rg Tested Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6362 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.01mH C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev. 2.0: September 2017 IAS 38 A EAS 7 mJ VSPIKE 36 V 31 Steady-State Steady-State W 13 6.2 RθJA RθJC W 4 TJ, TSTG Symbol t ≤ 10s A 22 PDSM TA=70°C A 27 PD TC=100°C V 100 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 60 ID TC=100°C Maximum 30 -55 to 150 Typ 15 40 3.1 www.aosmd.com °C Max 20 50 4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±100 nA 1.8 2.2 V 4.3 5.2 6.3 7.6 8.6 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 6.8 gFS Forward Transconductance VDS=5V, ID=20A 67 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max 0.6 mΩ mΩ S 1 V 30 A 820 pF 340 pF 40 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 nC Qg(4.5V) Total Gate Charge 6.1 nC Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 2.4 nC tD(on) Turn-On DelayTime 6.5 ns VGS=10V, VDS=15V, ID=20A tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 2.5 ns IF=20A, dI/dt=500A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 19 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 16.5 ns 17 ns A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using 1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev. 2.0: September 2017 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 70 4V 60 4.5V 50 50 10V 3.5V 40 ID(A) ID (A) VDS=5V 60 30 20 40 30 20 VGS=3V 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ) 25°C 125°C VGS=4.5V 6 4 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 1.0E+01 ID=20A 1.0E+00 1.0E-01 12 IS (A) RDS(ON) (mΩ) 16 125°C 125°C 1.0E-02 25°C 8 1.0E-03 25°C 4 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev. 2.0: September 2017 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=20A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 800 600 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 500 10µs RDS(ON) limited 10µs 100µs 1ms 10ms DC 1.0 0.0 0.01 300 200 100 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 400 Power (W) 100.0 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Coss 400 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 1E-05 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev. 2.0: September 2017 www.aosmd.com Page 4 of 6 40 80 30 60 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev. 2.0: September 2017 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev. 2.0: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6